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MUN5213DW1T1G
Bipolar Pre-Biased / Digital Transistor, BRT, Dual NPN, 50 V, 100 mA, 47 kohm, 47 kohm
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ProizvajalecONSEMI
Proizvajalčeva št. delaMUN5213DW1T1G
Številka naročila2464150
tehnični podatkovni list
21.730 Na Zalogi
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Dostava v 1–3 delovnih dneh
Standardno pošiljanje za naročila, oddana pred 17. uro
| Količina | |
|---|---|
| 5+ | € 0,191 |
| 50+ | € 0,116 |
| 100+ | € 0,0582 |
| 500+ | € 0,0525 |
| 1500+ | € 0,0468 |
Cena za:Each (Supplied on Cut Tape)
Najmanj: 5
Več: 5
€ 0,96 (brez DDV)
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INFORMACIJE O IZDELKU
ProizvajalecONSEMI
Proizvajalčeva št. delaMUN5213DW1T1G
Številka naročila2464150
tehnični podatkovni list
Transistor PolarityDual NPN
Collector Emitter Voltage Max NPN50V
Collector Emitter Voltage Max PNP-
Continuous Collector Current100mA
Base Input Resistor R147kohm
Base Emitter Resistor R247kohm
Transistor Case StyleSOT-363
No. of Pins6 Pin
Transistor MountingSurface Mount
Power Dissipation385mW
Operating Temperature Max150°C
DC Current Gain hFE Min80hFE
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Pregled izdelka
MUN5213DW1T1G is a MUN5213DW1 series NPN transistor with a monolithic bias resistor network, and dual NPN bias resistor transistor. It is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
- Simplifies circuit design, reduces board space, reduces component count
- Collector-base voltage is 50VDC max (TA = 25°C, common for Q1 and Q2)
- Collector-emitter voltage is 50VDC max (TA = 25°C, common for Q1 and Q2)
- Collector current - continuous is 100mAdc max (TA = 25°C, common for Q1 and Q2)
- Input forward voltage is 40VDC max (TA = 25°C, common for Q1 and Q2)
- Input reverse voltage is 10VDC max (TA = 25°C, common for Q1 and Q2)
- Total device dissipation is 187mW max (TA = 25°C)
- DC current gain is 140 (IC = 5.0mA, VCE = 10V, TA = 25°C)
- Input resistor range from 32.9 to 61.1kohm (TA = 25°C, common for Q1 and Q2)
- SOT-363 package, junction temperature range from -55 to +150°C
Tehnični podatki
Transistor Polarity
Dual NPN
Collector Emitter Voltage Max PNP
-
Base Input Resistor R1
47kohm
Transistor Case Style
SOT-363
Transistor Mounting
Surface Mount
Operating Temperature Max
150°C
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max NPN
50V
Continuous Collector Current
100mA
Base Emitter Resistor R2
47kohm
No. of Pins
6 Pin
Power Dissipation
385mW
DC Current Gain hFE Min
80hFE
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Tehnični dokumenti (2)
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Tarifna številka:85412100
US ECCN:EAR99
EU ECCN:NLR
Skladnost z direktivo RoHS:Da
RoHS
Skladno z direktivo RoHS glede ftalatov:Da
RoHS
SVHC:No SVHC (27-Jun-2024)
Prenesi potrdilo o skladnosti z izdelkom
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Teza (kg):.001
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