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| Količina | |
|---|---|
| 2500+ | € 0,627 |
| 7500+ | € 0,626 |
INFORMACIJE O IZDELKU
Pregled izdelka
The FCD4N60TM is a N-channel SuperFET® high voltage super-junction MOSFET utilizes charge balance technology for outstanding low ON-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dV/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
- Ultra low gate charge (Qg = 12.8nC)
- Low effective output capacitance (Coss.eff = 32pF)
- 100% avalanche tested
Področja uporabe
Industrial, Power Management, Communications & Networking, Lighting, Alternative Energy
Tehnični podatki
N Channel
3.9A
TO-252 (DPAK)
10V
50W
150°C
-
600V
1.2ohm
Surface Mount
5V
3Pins
SuperFET
Lead (27-Jun-2024)
Tehnični dokumenti (2)
Zakonodaja in okoljevarstvo
Država, v kateri je bila izvršena zadnja pomembnejša dodelava.Drzava poreklaChina
Država, v kateri je bila izvršena zadnja pomembnejša dodelava.
RoHS
RoHS
Potrdilo o skladnosti izdelka