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BF998
RF FET Transistor, 12 V, 30 mA, 200 mW, SOT-143B
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INFORMACIJE O IZDELKU
ProizvajalecNXP
Proizvajalčeva št. delaBF998
Številka naročila1081286RL
tehnični podatkovni list
Drain Source Voltage Vds12V
Continuous Drain Current Id30mA
Power Dissipation200mW
Operating Frequency Min-
Operating Frequency Max-
Transistor Case StyleSOT-143B
No. of Pins4Pins
Operating Temperature Max150°C
Channel TypeN Channel
Transistor MountingSurface Mount
Product Range-
Pregled izdelka
The BF998 from NXP is a surface mount, silicon N channel dual gate MOSFET in SOT143B package. This is an depletion type field effect transistor in plastic microminiature with source and substrate interconnected, transistors are protected against input voltage surges by integrated back to back diodes between gates and source. Features high forward transfer admittance to input capacitance ratio and low noise gain controlled amplifier up to 1 GHz. BF998 is used in professional communication equipment and VHF and UHF television tuners.
- Drain to source voltage (Vds) of 12V
- Drain current of 30mA
- Power dissipation of 200mW
- Operating junction temperature of 150°C
Področja uporabe
Power Management, Consumer Electronics, Portable Devices, Industrial
Tehnični podatki
Drain Source Voltage Vds
12V
Power Dissipation
200mW
Operating Frequency Max
-
No. of Pins
4Pins
Channel Type
N Channel
Product Range
-
Continuous Drain Current Id
30mA
Operating Frequency Min
-
Transistor Case Style
SOT-143B
Operating Temperature Max
150°C
Transistor Mounting
Surface Mount
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Tarifna številka:85412900
US ECCN:EAR99
EU ECCN:NLR
Skladnost z direktivo RoHS:Da
RoHS
Skladno z direktivo RoHS glede ftalatov:Da
RoHS
Prenesi potrdilo o skladnosti z izdelkom
Potrdilo o skladnosti izdelka
Teza (kg):.000047