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IXKN75N60C
MOSFET Transistor, N Channel, 75 A, 600 V, 0.03 ohm, 10 V, 3.9 V, SOT-227B
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ProizvajalecIXYS SEMICONDUCTOR
Proizvajalčeva št. delaIXKN75N60C
Številka naročila3438400
Nabor izdelkovCoolMOS Series
tehnični podatkovni list
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INFORMACIJE O IZDELKU
ProizvajalecIXYS SEMICONDUCTOR
Proizvajalčeva št. delaIXKN75N60C
Številka naročila3438400
Nabor izdelkovCoolMOS Series
tehnični podatkovni list
Transistor PolarityN Channel
Channel TypeN Channel
Continuous Drain Current Id75A
Drain Source Voltage Vds600V
Drain Source On State Resistance0.03ohm
On Resistance Rds(on)0.03ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.9V
Power Dissipation560W
Power Dissipation Pd560W
Operating Temperature Max150°C
Product RangeCoolMOS Series
SVHCNo SVHC (12-Jan-2017)
Pregled izdelka
IXKN75N60C is a CoolMOS™ power MOSFET. Typical applications are switched mode power supplies (SMPS), uninterruptible power supplies (UPS), power factor correction (PFC), welding, inductive heating.
- N-channel enhancement mode, low RDSon, high VDSS
- MiniBLOC package, electrically isolated copper base
- Low coupling capacitance to the heatsink for reduced EMI
- High power dissipation due to AlN ceramic substrate
- International standard package SOT-227, easy screw assembly
- High blocking capability, low on resistance
- Avalanche rated for unclamped inductive switching (UIS)
- Low thermal resistance due to reduced chip thickness, enhanced total power density
- Voltage rating VDSS is 600V at TVJ = 25°C to 150°C, current rating ID25 is 75A at TC = 25°C
- Resistor RDS(on) is 36mohm at VGS = 10V, ID = ID90
Tehnični podatki
Transistor Polarity
N Channel
Continuous Drain Current Id
75A
Drain Source On State Resistance
0.03ohm
Rds(on) Test Voltage
10V
Power Dissipation
560W
Operating Temperature Max
150°C
SVHC
No SVHC (12-Jan-2017)
Channel Type
N Channel
Drain Source Voltage Vds
600V
On Resistance Rds(on)
0.03ohm
Gate Source Threshold Voltage Max
3.9V
Power Dissipation Pd
560W
Product Range
CoolMOS Series
Tehnični dokumenti (2)
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Država, v kateri je bila izvršena zadnja pomembnejša dodelava.Drzava poreklaSouth Korea
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Tarifna številka:85412900
US ECCN:EAR99
EU ECCN:NLR
Skladnost z direktivo RoHS:Da
RoHS
Skladno z direktivo RoHS glede ftalatov:Da
RoHS
SVHC:No SVHC (12-Jan-2017)
Prenesi potrdilo o skladnosti z izdelkom
Potrdilo o skladnosti izdelka
Teza (kg):.004