HMC509LP5ETR

HMC509LP5E is a GaAs InGaP heterojunction bipolar transistor (HBT) MMIC VCO. This device integrates resonators, negative resistance devices, varactor diodes and feature a half frequency output. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is +13dBm typical from a +5V supply. It is widely used in application such as VSAT radio, point to point/multi-point radio, test equipment & industrial controls, military end-use etc.

• Dual output: Fo = 7.8GHz - 8.8GHz, Fo/2 = 3.9GHz - 4.4GHz
• No external resonator needed
• Phase noise is -115dBc/Hz typ at (100KHz offset, Vtune= +5V at RFOUT)
• Tune voltage range is 2V to 13V
• Supply current is 250mA typ at (TA = +25°C, Vcc = +5V)
• Tune port leakage current is 10µA typ at (TA = +25°C, Vcc = +5V)
• Output return loss is 2dB typ at (TA = +25°C, Vcc = +5V)
• Frequency drift rate is 0.9MHz/°C typ at (TA = +25°C, Vcc = +5V)
• Operating temperature is -40°C to +85°C
• Package style is QFN

Opombe

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